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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3297
DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg

PARAMETER
CHA IN
Collector current
Collector-base voltage
Collector-emitter voltage Emitter-base voltage
E SEM NG
TC=25ae
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 30 30 5 3 15 150 -55~150
UNIT V V V A W ae ae
Open base Open collector
Collector power dissipation Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IE=1mA , IC=0 IC=2A ;IB=0.2A IC=0.5A ; VCE=5V VCB=30V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=3A ; VCE=5V 70 20 MIN 30 30 5 TYP.
2SC3297
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT
MAX
UNIT V V V
1.0 1.0 10 10 |I |I
V V A A
Transition frequency

CHA IN
E SEM NG
IC=0.5A ; VCE=5V
OND IC
TOR UC
100
280
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3297

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3


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